1 - 2 ? 2000 ixys all rights reserved v ces i c25 v ce(sat) ixgh 12n100 1000 v 24 a 3.5 v ixgh 12n100a 1000 v 24 a 4.0 v low v ce(sat) igbt high speed igbt symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1000 v v cgr t j = 25 c to 150 c; r ge = 1 m 1000 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c24a i c90 t c = 90 c12a i cm t c = 25 c, 1 ms 48 a ssoa v ge = 15 v, t vj = 125 c, r g = 150 i cm = 24 a (rbsoa) clamped inductive load, l = 300 h @ 0.8 v ces p c t c = 25 c 100 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (m3) 1.13/10 nm/lb.in. weight 6g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 3 ma, v ge = 0 v 1000 v bv ces temperature coefficient 0.072 %/k v ge(th) i c = 500 a, v ge = v ge 2.5 5.5 v v ge(th) temperature coefficient -0.192 %/k i ces v ce = 0.8 v ces t j = 25 c 250 a v ge = 0 v t j = 125 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 12n100 3.5 v 12n100a 4.0 v g = gate c = collector e = emitter tab = collector g c e c (tab) to-247ad 95590b(7/00) features ? international standard package jedec to-247 ad 2nd generation hdmos tm process low v ce(sat) - for low on-state conduction losses high current handling capability mos gate turn-on - drive simplicity voltage rating guaranteed at high temperature (125 c) applications ac motor speed control dc servo and robot drives dc choppers uninterruptible power supplies (ups) switch-mode and resonant-mode power supplies advantages easy to mount with 1 screw (isolated mounting screw hole) high power density ixys reserves the right to change limits, test conditions, and dimensions.
2 - 2 ? 2000 ixys all rights reserved inductive load, t j = 25 c i c = i c90 , v ge = 15 v, l = 300 h, v ce = 0.8 v ces , r g = r off = 120 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v, l = 300 h v ce = 0.8 v ces , r g = r off = 120 remarks: switching times may increase for v ce (clamp) > 0.8 v ces , higher t j or increased r g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 6 10 s pulse test, t 300 s, duty cycle 2 % c ies 750 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 80 pf c res 30 pf q g 65 90 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 820nc q gc 24 45 nc t d(on) 100 ns t ri 200 ns t d(off) . 850 1000 ns t fi 12n100 800 1000 ns 12n100a 500 700 ns e off 12n100 2.5 mj 12n100a 1.5 3.0 mj t d(on) 100 ns t ri 200 ns e on 1.1 mj t d(off) 900 ns t fi 12n100 1250 ns 12n100a 950 ns e off 12n100 3.5 mj 12n100a 2.2 mj r thjc 1.25 k/w r thck 0.25 k/w ixgh12n100/a characteristic curves may be found in the ixgh12n100u/au1 data sheet. to-247 ad (ixgh) outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 ixgh12n100 IXGH12N100A ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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